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HYB314171BJL-70 - 256k x 16 Bit FPM DRAM 3.3 V 60 ns -3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh 256k x 16 Bit FPM DRAM 3.3 V 70 ns From old datasheet system

HYB314171BJL-70_288833.PDF Datasheet

 
Part No. HYB314171BJL-70 HYB314171BJL-60 HYB314171BJL-50 HYB314171BJ-70 HYB314171BJ-60 HYB314171BJ-50 HB314171 HYB314171BJ-50-
Description 256k x 16 Bit FPM DRAM 3.3 V 60 ns
-3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
256k x 16 Bit FPM DRAM 3.3 V 70 ns
From old datasheet system

File Size 1,337.62K  /  24 Page  

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SIEMENS[Siemens Semiconductor Group]



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 Full text search : 256k x 16 Bit FPM DRAM 3.3 V 60 ns -3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh 256k x 16 Bit FPM DRAM 3.3 V 70 ns From old datasheet system


 Related Part Number
PART Description Maker
HYB314171BJL-70 HYB314171BJL-60 HYB314171BJL-50 HY 256k x 16 Bit FPM DRAM 3.3 V 60 ns
-3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
256k x 16 Bit FPM DRAM 3.3 V 70 ns
From old datasheet system
Infineon
SIEMENS[Siemens Semiconductor Group]
Q67100-Q2039 HYB314100BJ-50 HYB314100BJ-60 HYB3141 4M x 1 Bit FPM DRAM 3.3 V 60 ns
4M x 1 Bit FPM DRAM 3.3 V 50 ns
-4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
4M x 1 Bit FPM DRAM 3.3 V 70 ns
From old datasheet system
Infineon
SIEMENS[Siemens Semiconductor Group]
HYB3117400BJ-50 HYB3117400BJ-60 HYB3117400BJ-70 HY 4M x 4 Bit FPM DRAM 3.3 V 4k 50 ns
4M x 4 Bit FPM DRAM 3.3 V 4k 60 ns
-3.3V 4M x 4-Bit Dynamic RAM
Infineon
SIEMENS[Siemens Semiconductor Group]
VG2618160CJ-5 DRAM Chip, FPM DRAM, 2MByte, 5V Supply, Commercial, SOJ, 42-Pin
Vanguard International Semiconductor
IS41LV32256 IS41LV32256-28PQ IS41LV32256-28TQ IS41 x32 EDO Page Mode DRAM X32号,江户页面模式的DRAM
256K x 32 (8-Mbit) EDO DRAM 3.3V, 100/83/66 MHz(3.3V, 100/83/66 MHz,256K x 32带扩展数据输出动态RAM) 256K × 32兆位),江户内存3.3伏,100/83/66兆赫.3伏,100/83/66兆赫56K × 32带扩展数据输出动态内存)
256K x 32 (8-Mbit) EDO DYNAMIC RAM 3.3V, 100/83/66 MHz
Integrated Silicon Solution, Inc.
UPD42S4280A 256K x 18-Bit DRAM
NEC Electronics
HY53C256 HY53C256F HY53C256LF HY53C256LS HY53C256S 256K x 1-Bit CMOS DRAM
Hynix Semiconductor
MCM94256 256K x 9-Bit DRAM Module
Motorola
UT51C164 UT51C164JC-35 UT51C164MC-60 UT51C164JC-40 256K X 16 BIT EDO DRAM
UTRON Technology
ETC[ETC]
HYB314175BJL-60 HYB314175BJL-55 HYB314175BJL-50 HY 256k x 16 Bit EDO DRAM 3.3 V 60 ns
-3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh)
From old datasheet system
Infineon
SIEMENS[Siemens Semiconductor Group]
HM514260AJ-7 HM514260ALJ-7 HM514260ALZ-10 256K X 16 FAST PAGE DRAM, 70 ns, PDSO40
256K X 16 FAST PAGE DRAM, 100 ns, PZIP40

 
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